| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
The present disclosure relates to a semiconductor device and a method of manufacturing the same. The semiconductor device may include a first metal gate electrode provided in a NMOS region of a substrate; and a second metal gate electrode provided in a PMOS region of the substrate, wherein the first and second metal gate electrodes may be formed of TiN material or TiAlN material. Here, the first metal gate electrode may have a higher titanium (Ti) content than the second metal gate electrode, and the second metal gate electrode may have a higher nitrogen (N) content than the first metal gate electrode. |
| 申请公布号 |
US9013000(B2) |
申请公布日期 |
2015.04.21 |
| 申请号 |
US201313931079 |
申请日期 |
2013.06.28 |
| 申请人 |
SK Hynix Inc.;Industry-University Cooperation Foundation Hanyang University |
发明人 |
Choi Chang-Hwan |
| 分类号 |
H01L21/70;H01L27/092;H01L21/8238 |
主分类号 |
H01L21/70 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first metal gate electrode provided in an NMOS region of a substrate; and a second metal gate electrode provided in a PMOS region of the substrate, wherein the first metal gate electrode are formed of TiN material or TiAlN material, wherein the first metal electrode has a higher titanium (Ti) content than the second metal gate electrode, wherein the second metal gate electrode has a higher nitrogen (N) content than the first metal gate electrode, wherein the first metal gate electrode comprises a Ti-rich TiN layer, and wherein the second metal gate electrode comprises a stack structure of an N-rich TiN layer and a Ti-rich TiN layer. |
| 地址 |
Icheon KR |
