Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer

摘要

According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided between the first and second layers, a first stacked structure provided between the first layer and the light emitting unit, and a second stacked structure provided between the first layer and the first stacked structure. The light emitting unit includes barrier layers and a well layer provided between the barrier layers. The first stacked structure includes third layers including a nitride semiconductor, and fourth layers stacked with the third layers and including GaInN. The fourth layers have a thinner thickness than the well layer. The second stacked structure includes fifth layers including a nitride semiconductor, and sixth layers stacked with the fifth layers and including GaInN. The sixth layers have a thinner thickness than the well layer.

主权项

1. A semiconductor light emitting device comprising:
a first layer of n-type including a nitride semiconductor; a second layer of p-type including a nitride semiconductor; a light emitting unit provided between the first layer and the second layer and including a plurality of barrier layers and a well layer provided between the barrier layers; a first stacked structure provided between the first layer and the light emitting unit, the first stacked structure including:
a plurality of third layers including AlGaInN; anda plurality of fourth layers alternately stacked with the third layers, each of the fourth layers having a thickness thinner than a thickness of the well layer, and including GaInN; anda second stacked structure provided between the first layer and the first stacked structure, the second stacked structure including:a plurality of fifth layers including GaN; anda plurality of sixth layers alternately stacked with the fifth layers, each of the sixth layers having a thickness thinner than the thickness of the well layer, and including GaInN; wherein a Si concentration in a first barrier layer of the barrier layers nearest to the first stacked structure is higher than a Si concentration in the first stacked structure, a Si concentration in the second stacked structure is lower than the Si concentration in the first stacked structure, a Si concentration in the first layer is lower than the Si concentration in the second stacked structure, a Si concentration in other barrier layers except the first barrier layer is lower than the Si concentration in the first barrier layer, and the Si concentration in the first barrier layer is 1.2×1019 cm−3 or more and 1.5×1019 cm−3 or less.