发明名称 Methods for depositing oxygen deficient metal films
摘要 Methods of depositing an oxygen deficient metal film by chemical reaction of at least one precursor having a predetermined oxygen deficiency on a substrate. An exemplary method includes, during a metal oxide deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an oxygen reactant gas comprising oxygen to form a layer containing a metal oxide on the substrate. During an oxygen deficient deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an additional reactant gas excluding oxygen to form a second layer at least one of a metal nitride and a mixed metal on the substrate during a second cycle, the second layer being oxygen deficient relative to the layer containing the metal oxide; and repeating the metal oxide deposition cycle and the oxygen deficient deposition cycle to form the oxygen deficient film having the predetermined oxygen deficiency.
申请公布号 US9011973(B2) 申请公布日期 2015.04.21
申请号 US201313934486 申请日期 2013.07.03
申请人 Applied Materials, Inc. 发明人 Chu Schubert;Ping Er-Xuan;Senzaki Yoshihide
分类号 C23C16/40;C23C16/06;C23C16/455;C23C28/00 主分类号 C23C16/40
代理机构 Servilla Whitney LLC 代理人 Servilla Whitney LLC
主权项 1. A method of depositing an oxygen deficient metal composite film comprising at least two layers by chemical reaction of at least one precursor having a predetermined oxygen deficiency on a substrate, the method comprising: during a metal oxide deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an oxygen reactant gas comprising oxygen to form a layer containing a metal oxide; during an oxygen deficient deposition cycle, exposing the substrate to a reactant gas comprising a metal reactant gas and optionally a reactant gas excluding oxygen to form an oxygen deficient layer selected from one or more of a metal, a metal nitride, a metal carbonitride, a metal carbide, a metal oxynitride, a metal oxycarbonitride, a metal silicide, a nitrided metalsilicide (MSiN), a metal silicate, a nitride metal silicate (MSiON)) and combinations thereof , the oxygen deficient layer being oxygen deficient relative to the layer containing the metal oxide; and repeating the metal oxide deposition cycle and the oxygen deficient deposition cycle to form the oxygen deficient film having the predetermined oxygen deficiency; wherein said method of deposition is selected from chemical vapor deposition and atomic layer deposition or a combination thereof, and wherein the composite film comprises one or more selected from HfO2/HfN, HfO2/HfTiO, HfO2/HfAl, Al2O3/Al2O, ZrO2/ZrO, TiO2/TiO, NiO/NiN, Cu:MnOx/Cu:MnO, CuxN, Cu:MoOx/Cu:MoO, Ln—Zn—O/Ln—Zn—N, SrTiO3/SrTiO, Cr—SrZrO3/Cr—SrZrO, PrCaMnO3/PrCaMnO, SrLaTiO3/SrLaTiO, LaSrFeO3/LaSrFeO, LaSrCoO3/LaSrCoO, (Ba,Sr)TiO3/(Ba,Sr)TiO, Hf(La)Ox, Hf(Ln)Ox and combinations thereof, and wherein Ln is a lanthanide.
地址 Santa Clara CA US