主权项 |
1. A method of depositing an oxygen deficient metal composite film comprising at least two layers by chemical reaction of at least one precursor having a predetermined oxygen deficiency on a substrate, the method comprising:
during a metal oxide deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an oxygen reactant gas comprising oxygen to form a layer containing a metal oxide; during an oxygen deficient deposition cycle, exposing the substrate to a reactant gas comprising a metal reactant gas and optionally a reactant gas excluding oxygen to form an oxygen deficient layer selected from one or more of a metal, a metal nitride, a metal carbonitride, a metal carbide, a metal oxynitride, a metal oxycarbonitride, a metal silicide, a nitrided metalsilicide (MSiN), a metal silicate, a nitride metal silicate (MSiON)) and combinations thereof , the oxygen deficient layer being oxygen deficient relative to the layer containing the metal oxide; and repeating the metal oxide deposition cycle and the oxygen deficient deposition cycle to form the oxygen deficient film having the predetermined oxygen deficiency; wherein said method of deposition is selected from chemical vapor deposition and atomic layer deposition or a combination thereof, and wherein the composite film comprises one or more selected from HfO2/HfN, HfO2/HfTiO, HfO2/HfAl, Al2O3/Al2O, ZrO2/ZrO, TiO2/TiO, NiO/NiN, Cu:MnOx/Cu:MnO, CuxN, Cu:MoOx/Cu:MoO, Ln—Zn—O/Ln—Zn—N, SrTiO3/SrTiO, Cr—SrZrO3/Cr—SrZrO, PrCaMnO3/PrCaMnO, SrLaTiO3/SrLaTiO, LaSrFeO3/LaSrFeO, LaSrCoO3/LaSrCoO, (Ba,Sr)TiO3/(Ba,Sr)TiO, Hf(La)Ox, Hf(Ln)Ox and combinations thereof, and wherein Ln is a lanthanide. |