Two terminal resistive switching device structure and method of fabricating

摘要

A method of forming a two terminal device. The method includes forming a first dielectric material overlying a surface region of a substrate. A bottom wiring material is formed overlying the first dielectric material and a switching material is deposited overlying the bottom wiring material. The bottom wiring material and the switching material is subjected to a first patterning and etching process to form a first structure having a top surface region and a side region. The first structure includes at least a bottom wiring structure and a switching element having a first side region, and a top surface region including an exposed region of the switching element. A second dielectric material is formed overlying at least the first structure including the exposed region of the switching element. The method forms an opening region in a portion of the second dielectric layer to expose a portion of the top surface region of the switching element. A top wiring material including a conductive material is formed overlying at lease the opening region such that the conductive material is in direct contact with the switching element. A second etching process is performed to form at least a top wiring structure. In a specific embodiment, the side region of the first structure including a first side region of the switching element is free from a contaminant conductive material from the second etching process.

主权项

1. A method for forming a two terminal switching device, comprising:
providing a substrate comprising a surface region; forming a first dielectric material overlying the surface region of the substrate; depositing a bottom wiring material overlying the dielectric material; depositing a contact material overlying the bottom wiring material; depositing a switching material overlying the contact material; forming a mask overlying the switching material to expose a portion of the switching material to be etched; subjecting the portion of the switching material, the contact material, and the bottom wiring material to a first etching process using the mask to form a first structure having a top surface region and a side region, the first structure including at least a bottom wiring structure and a switching element having a first side region, the top surface region including an exposed region of the switching element; depositing a second dielectric material overlying at least the first structure including the exposed region of the switching element, the side region including the first side region of the switching element, and an exposed portion of the first dielectric material; forming a second dielectric material surface overlying at least the first structure while maintaining a portion of the second dielectric material overlying the first structure including the exposed region of the switching element, the second dielectric material including a planarized surface region; forming an opening region in a portion of the second dielectric material to expose a portion of the top surface region of the first structure, the top surface region including a top surface region of the switching element while the side region of the first structure including the first side region of the switching element being covered by the second dielectric material; depositing a conductive material overlying the second dielectric material including the opening region, the conductive material being in direct contact with a portion of the exposed region of the switching element and wherein particles of the conductive material form within the switching element in response to an electric signal applied to the two terminal switching device, the side region of the first structure including the first side region of the switching element being free from the conductive material; depositing a top wiring material overlying at least the conductive material; and performing a second etching process to form at least a top wiring structure comprising at least the top wiring material and the conductive material while maintaining the side region of the first structure including the first side region of the switching element free from a contaminant conductive material to reduce incidence of an electrical connection between the top wiring structure and the bottom wiring structure.