发明名称 |
Memory device, memory system including a non-volatile memory configured to output a repair data in response to an initialization signal |
摘要 |
A memory device includes a non-volatile memory configured to store a repair data and output the repair data in response to an initialization signal, a plurality of registers configured to store the repair data outputted from the non-volatile memory, a plurality of memory banks configured to replace normal cells with redundant cells by using the repair data stored in corresponding registers among the plurality of registers, a verification circuit configured to generate a completion signal for informing that transfer of the repair data from the non-volatile memory to the plurality of registers is completed, and an output circuit configured to output the completion signal to a device other than the memory device. |
申请公布号 |
US9015463(B2) |
申请公布日期 |
2015.04.21 |
申请号 |
US201213601629 |
申请日期 |
2012.08.31 |
申请人 |
SK Hynix Inc. |
发明人 |
Jeong Jeongsu;Kim Youncheul;Jeong Gwangyoung Stanley;Kang Bokmoon |
分类号 |
G06F15/177;G06F11/00;G11C16/20;G11C29/00;G11C7/20;G11C29/44 |
主分类号 |
G06F15/177 |
代理机构 |
IP & T Group LLP |
代理人 |
IP & T Group LLP |
主权项 |
1. A memory device, comprising:
a non-volatile memory configured to store a repair data and output the repair data in response to an initialization signal; a plurality of registers configured to store the repair data outputted from the non-volatile memory; a plurality of memory banks configured to replace normal cells with redundant cells by using the repair data stored in corresponding registers among the plurality of registers; a verification circuit configured to generate a completion signal for informing that transfer of the repair data from the non-volatile memory to the plurality of registers is completed; and an output circuit configured to output the completion signal to a device other than the memory device. |
地址 |
Gyeonggi-do KR |