发明名称 Memory device, memory system including a non-volatile memory configured to output a repair data in response to an initialization signal
摘要 A memory device includes a non-volatile memory configured to store a repair data and output the repair data in response to an initialization signal, a plurality of registers configured to store the repair data outputted from the non-volatile memory, a plurality of memory banks configured to replace normal cells with redundant cells by using the repair data stored in corresponding registers among the plurality of registers, a verification circuit configured to generate a completion signal for informing that transfer of the repair data from the non-volatile memory to the plurality of registers is completed, and an output circuit configured to output the completion signal to a device other than the memory device.
申请公布号 US9015463(B2) 申请公布日期 2015.04.21
申请号 US201213601629 申请日期 2012.08.31
申请人 SK Hynix Inc. 发明人 Jeong Jeongsu;Kim Youncheul;Jeong Gwangyoung Stanley;Kang Bokmoon
分类号 G06F15/177;G06F11/00;G11C16/20;G11C29/00;G11C7/20;G11C29/44 主分类号 G06F15/177
代理机构 IP & T Group LLP 代理人 IP & T Group LLP
主权项 1. A memory device, comprising: a non-volatile memory configured to store a repair data and output the repair data in response to an initialization signal; a plurality of registers configured to store the repair data outputted from the non-volatile memory; a plurality of memory banks configured to replace normal cells with redundant cells by using the repair data stored in corresponding registers among the plurality of registers; a verification circuit configured to generate a completion signal for informing that transfer of the repair data from the non-volatile memory to the plurality of registers is completed; and an output circuit configured to output the completion signal to a device other than the memory device.
地址 Gyeonggi-do KR