| 摘要 |
<p>The present invention relates to a semiconductor light emitting device comprising: a plurality of semiconductor layers having a first semiconductor layer which has a first conductivity, a second semiconductor layer which has a second conductivity to be different with the first conductivity, and an active layer which is interposed between the first semiconductor layer and the second semiconductor layer and generates light through recombination of an electron and a hole; a distributed Bragg reflector reflecting light from the active layer and having a first opening, wherein the surface of the distributed Bragg reflector formed by the first opening inclines; a first electrode supplying one of either the electron or the hole to the first semiconductor layer; and a second electrode electrically connected with a plurality of semiconductor layers through the first opening to supply the other of either the electron or the hole to the second semiconductor layer.</p> |
