Thin film transistors formed by organic semiconductors using a hybrid patterning regime

摘要

The present disclosure describes a process strategy for forming bottom gate/bottom contact organic TFTs in CMOS technology by using a hybrid deposition/patterning regime. To this end, gate electrodes, gate dielectric materials and drain and source electrodes are formed on the basis of lithography processes, while the organic semiconductor materials are provided as the last layers by using a spatially selective printing process.

主权项

1. A method comprising:
forming a thin-film transistor, wherein forming the thin-film transistor includes:
using lithography techniques, forming a gate electrode, a gate dielectric, and source and drain electrodes above a substrate; andusing a printing process, forming a patterned organic semiconductor material above the substrate and surrounding the source and drain electrodes.