发明名称 HIGH-FREQUENCY SUBSTRATE MATERIAL
摘要 <p>PROBLEM TO BE SOLVED: To provide a high-frequency substrate material which is suitable for high frequency use and has excellent dielectric properties, an excellent degree of freedom in wiring, lightweight properties, flexibility and heat resistance and further the adhesion strength enough to withstand bending work or the like.SOLUTION: The high-frequency substrate material has, at the least, an electric conductor layer 1, an adhesive layer 1, a foam layer, another adhesive layer 2 and another electric conductor layer 2 which are layered in this order. The foam layer has 3 or lower relative dielectric constant at 12 GHz and the dielectric dissipation factor lower than 0.001 at 800 MHz to 12 GHz. The foam layer contains a foamed body of an olefin-based resin having 110°C or higher melting point. The adhesive layer 1 is used for sticking the electric conductor layer 1 to the foam layer and has 4 N/25 mm or higher adhesion strength and the adhesive layer 2 is used for sticking the electric conductor layer 2 to the foam layer and has 4 N/25 mm or higher adhesion strength.</p>
申请公布号 JP2015074089(A) 申请公布日期 2015.04.20
申请号 JP20130209531 申请日期 2013.10.04
申请人 MITSUI CHEMICALS TOHCELLO INC 发明人 MURAI HIDEKI;AIZAWA TAMOTSU;SUZUKI MASAKI
分类号 B32B5/18;B32B15/20;B32B27/32 主分类号 B32B5/18
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