SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR MANUFACTURING AND INSPECTING APPARATUS, AND INSPECTING APPARATUS

摘要

A semiconductor device having Cu wiring including a basic crystal structure which can reduce surface voids, and an inspecting technique for the semiconductor device. In the semiconductor device, surface voids can be reduced down to 1/10 or less of a current practical level by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 27 or less to all crystal grain boundaries of a Cu wiring to 60% or higher. Alternatively, a similar effect of surface void reduction can be obtained by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 3 to all crystal grain boundaries of a Cu wiring to 40% or higher.

主权项

1. A method of manufacturing a semiconductor device comprising the steps of: forming an insulating layer on a semiconductor substrate; and forming at least one layer of Cu wiring in the insulating layer via a composite layer including a barrier layer and a seed layer on the barrier layer and provided between the Cu wiring and the insulating layer, wherein,
a step of examining grain boundary characteristics of the Cu wiring is provided after the step of forming the Cu wiring.