| 摘要 |
PROBLEM TO BE SOLVED: To provide: a production method of a Ni thin film by which the Ni thin film can be directly formed on a Si substrate, and contaminant is not remained in the formed Ni thin film; and a production method of the NiSi coating film by siliciding a Ni thin film properly.SOLUTION: The invention is a production method of the Ni thin film on the Si substrate by a chemical vapor deposition. As a material compound, hydrocarbon nickel complex without including elements other than carbon and hydrogen in the structure is used, as shown in the following formula, with the hydrocarbon nickel complex being a nickel complex in which a cyclopentadienyl group (Cp) or its derivative and a linear or cyclic alkenyl group consisting of three to nine carbon atoms or its derivative are configured. Hydrogen is used as reactive gas, and deposition pressure is 1 to 150 torr and deposition temperature is 80 to 250°C, in the production method of the nickel thin film. |
