| 摘要 |
The present disclosure relates to a method for removing a hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W from a semiconductor substrate. The method comprising contacting the semiconductor substrate with a removal composition. The removal composition comprises 0.1 wt% to 90 wt% of an oxidizing agent; 0.0001 wt% to 50 wt% of a carboxylate; and the balance up to 100 wt% of the removal composition comprising deionized water. |
