ISOLATION OF MAGNETIC LAYERS DURING ETCH IN A MAGNETORESISTIVE DEVICE

摘要

Isolation of magnetic layers in the magnetoresistive stack is achieved by passivation of sidewalls of the magnetic layers or deposition of a thin film of non-magnetic dielectric material on the sidewalls prior to subsequent etching steps. Etching the magnetic layers using a non-reactive gas further prevents degradation of the sidewalls.

主权项

1. A method of manufacturing a magnetoresistive device that includes a magnetoresistive stack, comprising:
etching a first dielectric layer corresponding to a tunnel junction for the device; etching a first portion of the magnetoresistive stack under the first dielectric layer to produce an etched first portion of the magnetoresistive stack having sidewalls, where the first portion of the magnetoresistive stack includes at least one layer of magnetic material; after etching the first portion of the magnetoresistive stack, encapsulating the sidewalls of the etched first portion of the magnetoresistive stack; and after encapsulating the sidewalls of the etched first portion of the magnetoresistive stack, etching a second portion of the magnetoresistive stack to produce an etched second portion of the magnetoresistive stack, wherein the second portion of the magnetoresistive stack includes a layer of antiferromagnetic material, and where the first portion of the magnetoresistive stack is over the second portion of the magnetoresistive stack.