覆膜型材;FILM PROFILES

摘要

本发明提供一种光电子装置，其包括第一电极、第二电极，以及安置于该第一电极与该第二电极之间的半导电性材料，以及界定围绕包含该第一电极之表面层区域之井之电绝缘堤部结构，该装置具有光学腔，该光学腔包括：完全光反射性层；部分光反射性层；及层结构，其包括具有该半导电性材料之至少一个可溶液处理层且安置于该完全光反射性层与该部分光反射性层之间。该表面层区域包括该等反射性层中之一者且该可溶液处理层安置于该表面层区域上及侧壁之第一斜面及第二斜面上。该完全光反射性层及该部分光反射性层经安置以提供用于在该层结构中产生之光之谐振腔，且该侧壁具有自该表面层区域延伸之第一斜面及自该第一斜面延伸之较陡峭第二斜面。该层结构之至少一个层之厚度直方图之半峰全高宽度系小于5nm，该厚度安置成跨过至少该表面层区域之实质上规则地间隔开之各别点，该等点包括该表面层区域与该侧壁之间的边界处之第一点以及在该表面层区域上且与该边界间隔开至少10微米之第二点。; a partially light reflective layer; and a layer structure comprising at least one solution processable layer comprising the semiconductive material and disposed between the fully light reflective layer and the partially light reflective layer. The surface layer region comprises one of the reflective layers and the solution processable layer is disposed on the surface layer region and on the first and second slopes of the side wall. The fully light reflective layer and the partially light reflective layer are disposed to provide a resonant cavity for light generated in the layer structure, and the side wall has a first slope extending from the surface layer region and a steeper second slope extending from the first slope. A full width at half maximum of a histogram of thicknesses of at least one layer of the layer structure is less than 5 nm, the thicknesses being disposed over substantially regularly spaced respective points of at least the surface layer region, said points comprising a first point at a boundary between the surface layer region and the side wall and a second point on the surface layer region and spaced at least 10 microns from the boundary.