HIGH UV CURING EFFICIENCY FOR LOW-K DIELECTRICS

摘要

One embodiment is a method for semiconductor processing. In this method, a precursor film is provided over a semiconductor substrate, where the precursor film is made of a structural former and porogen. Prior to cross-linking, the porogen is removed by exposure to UV radiation having one or more wavelengths in the range of 150 nm to 300 nm, while a temperature of 300° C. to 500° C. is applied to the semiconductor substrate. Meanwhile, a Argon:Helium flow rate of 80>Ar>10 slm, 80>He>10 slm is set for the ambient substrate environment where the ratio of Ar:He ranges from 0:1 to 1:0 by volume or molality.

主权项

1. A multi-station tool for semiconductor processing and formation of an extreme low-k dielectric, comprising:
a first station where porogen is removed from a precursor film by exposing the precursor film to ultraviolet (UV) radiation while a substrate on which the precursor film is disposed is kept at a temperature of between 300° C. and 500° C. while an Argon gas flow is set to between 10 slm and 80 slm or while a helium gas flow is set to between 10 slm and 80 slm.