SEMICONDUCTOR DEVICE

摘要

A semiconductor device according to the present invention includes, in a termination region, a p− type breakdown voltage holding region that is an impurity region formed in a predetermined depth direction from a substrate surface of an n− type substrate, a first insulating film formed on the n− type substrate so as to cover at least the p− type breakdown voltage holding region, a first field plate formed on the first insulating film, a second insulating film formed so as to cover the first field plate and the first insulating film, and a second field plate formed on the second insulating film. The first insulating film is thicker in a corner portion than in an X-direction straight portion and a Y-direction straight portion.

主权项

1. A semiconductor device comprising a termination region provided so as to surround an element region in plan view, said termination region having a straight portion and a corner portion,
said semiconductor device comprising, in said termination region: a breakdown voltage holding region formed in a predetermined depth direction from a surface of a first conductivity-type substrate, said breakdown voltage holding region being a second conductivity-type low-concentration impurity region; a first insulating film on said substrate, said first insulating film formed so as to cover at least said breakdown voltage holding region; a first field plate formed on said first insulating film; a second insulating film formed so as to cover said first field plate and said first insulating film; and a second field plate formed on said second insulating film, wherein said first insulating film is thicker in said corner portion than in said straight portion.