| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
According to one embodiment, a semiconductor device includes a first complementary semiconductor device provided on a semiconductor substrate, and including a CMOS circuit, a metal electrode provided above the first complementary semiconductor device, a semiconductor layer provided above the metal electrode, including an nMOS region and a pMOS region separated from each other, and containing Ge; and a second complementary semiconductor device including an nMOSFET provided on the first portion of the semiconductor layer and a pMOSFET provided on the second portion of the semiconductor layer. |
| 申请公布号 |
US2015102419(A1) |
申请公布日期 |
2015.04.16 |
| 申请号 |
US201414577209 |
申请日期 |
2014.12.19 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
IKEDA Keiji;TEZUKA Tsutomu;KAMIMUTA Yuuichi;FURUSE Kiyoe |
| 分类号 |
H01L27/092;H01L21/02;H01L29/49;H01L29/51;H01L29/165;H01L21/8238;H01L21/324 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first complementary semiconductor device provided on a semiconductor substrate, and including a CMOS circuit; a metal electrode provided above the first complementary semiconductor device; a semiconductor layer provided above the metal electrode, including an nMOS region and a pMOS region separated from each other, and containing Ge; and a second complementary semiconductor device including an nMOSFET provided on the nMOS region of the semiconductor layer and a pMOSFET provided on the pMOS region of the semiconductor layer. |
| 地址 |
Tokyo JP |
