III-Nitride Quantum Well Structure and a Light-Emitting Unit Using the Same

摘要

An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer.

主权项

1. An III-nitride quantum well structure comprising:
a gallium nitride base having a gallium nitride buffering layer, a gallium nitride post extending from the gallium nitride buffering layer along an axis, and a gallium nitride pyramid gradually expanding from the gallium nitride post along the axis to form a mounting surface; an indium gallium nitride layer having a first coupling face and a second coupling face opposite to the first coupling face, wherein the first coupling face is coupled with the mounting surface of the gallium nitride base; and a gallium nitride covering layer having a first coupling face and a second coupling face opposite to the first coupling face of the gallium nitride covering layer, wherein the first coupling face of the gallium nitride covering layer is coupled with the second coupling face of the indium gallium nitride layer.