ENABLING HIGH ACTIVATION OF DOPANTS IN INDIUM-ALUMINUM-GALIUM-NITRIDE MATERIAL SYSTEM USING HOT IMPLANTATION AND NANOSECOND ANNEALING

摘要

Embodiments of the present disclosure generally relate to doping and annealing substrates. The substrates may be doped during a hot implantation process, and subsequently annealed using a nanosecond annealing process. The combination of hot implantation and nanosecond annealing reduces lattice damage of the substrates and facilitates a higher dopant concentration near the surface of the substrate to facilitate increased electrical contact with the substrate. An optional capping layer may be placed over the substrate to reduce outgassing of dopants or to control dopant implant depth.