SOLID STATE STORAGE DEVICE AND CONTROLLING METHOD THEREOF

摘要

A solid state storage device and controlling method thereof are provided, and the method includes following steps. Data is programmed into a flash memory module by using a first programming scheme. A data error parameter of the flash memory module is determined. If the data error parameter is greater than an error predefine value, the data is programmed into the flash memory module by using a second programming scheme. The first programming scheme and the second programming scheme are respectively mapping to a first threshold voltage frame and a second threshold voltage frame, and voltage interval of the second threshold voltage frame is broader than voltage interval of the first threshold voltage frame.

主权项

1. A controlling method of a solid state storage device, wherein the solid state storage device comprises a flash memory module for storing data, and the flash memory module has a plurality of memory cells, each of the plurality of memory cells having a plurality of storage states, the controlling method comprises:
using a first programming scheme to program the data into the flash memory module; determining a data error parameter of the flash memory module; and if the data error parameter exceeds an error predefine value, using a second programming scheme to program the data into the flash memory module, wherein the first programming scheme and the second programming scheme respectively map to a first threshold voltage frame and a second threshold voltage frame, and a voltage interval of the second threshold voltage frame is broader than a voltage interval of the first threshold voltage frame.