| 发明名称 |
SEMICONDUCTOR PROCESS |
| 摘要 |
A semiconductor process is provided, including following steps. A polysilicon layer is formed on a substrate. The polysilicon layer is cryo-implanted with at least two of multiple species including a germanium species, a carbon species and a p- or n-type species, at a temperature ranging between −40° C. and −120° C. An asymmetric dual-side heating treatment is performed to the polysilicon layer, wherein a power for a front-side heating is different from a power for a backside heating. |
| 申请公布号 |
US2015104914(A1) |
申请公布日期 |
2015.04.16 |
| 申请号 |
US201414551922 |
申请日期 |
2014.11.24 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Yang Chan-Lon;Hwang Ching-Nan;Lin Chi-Heng;Yang Chun-Yao;Lin Ger-Pin;Li Ching-I |
| 分类号 |
H01L21/265;H01L21/02;H01L21/3215;H01L49/02;H01L27/06 |
主分类号 |
H01L21/265 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor process, comprising:
forming a polysilicon layer on a substrate; cryo-implanting the polysilicon layer with at least two of a plurality of species comprising a germanium species, a carbon species and a p- or n-type species, at a temperature ranging between −40° C. and −120° C.; and performing an asymmetric dual-side heating treatment to the polysilicon layer, wherein a power for a front-side heating is different from a power for a backside heating. |
| 地址 |
Hsinchu TW |
