发明名称 |
SEMICONDUCTOR DEVICES SUITABLE FOR NARROW PITCH APPLICATIONS AND METHODS OF FABRICATION THEREOF |
摘要 |
Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device. |
申请公布号 |
US2015102396(A1) |
申请公布日期 |
2015.04.16 |
申请号 |
US201414515767 |
申请日期 |
2014.10.16 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
GANGULY UDAYAN;YOKOTA YOSHITAKA;TANG JING;THIRUPAPULIYUR SUNDERRAJ;OLSEN CHRISTOPHER SEAN;SUN SHIYU;POON TZE WING;LIU WEI;SWENBERG JOHANES;NGUYEN VICKY U.;SRINIVASAN SWAMINATHAR;NEWMAN JACOB |
分类号 |
H01L29/788;H01L21/67 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a substrate comprising a semiconductive material; and a floating gate disposed above the substrate and having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate, wherein a width of the floating gate decreases non-linearly from the first width to the second width. |
地址 |
Santa Clara CA US |