Method of fabricating vertical structure LEDs

摘要

A light-emitting device, comprising:
a conductive support layer (156);
a first ohmic contact (150) over the conductive support layer;
a first type GaN-based layer (128) over the first ohmic contact;
an active layer (126) over the first type GaN-based layer;
a second type GaN-based layer (124) over the active layer; and
a second ohmic contact (160) over the second type GaN-based layer;
wherein the light generated in the active layer emits mainly in the direction of at least one of
the first type GaN-based layer and the second type GaN-based layer. The device may comprise a passivation layer (162) formed after substrate transfer.