发明名称 |
METHOD FOR PREPARING COPPER INDIUM GALLIUM DISELENIDE THIN-FILM SOLAR CELL |
摘要 |
<p>A method for fabricating a Cu-In-Ga-Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu-In-Ga-Se absorbing layer on the molybdenum back electrode; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu-In-Ga-Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.</p> |
申请公布号 |
EP2860768(A1) |
申请公布日期 |
2015.04.15 |
申请号 |
EP20130804992 |
申请日期 |
2013.04.11 |
申请人 |
LIN, LIUYU;ZHANG, ZHUN |
发明人 |
LIN, LIUYU;ZHANG, ZHUN |
分类号 |
H01L31/18;C23C14/34;C23C14/35 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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