| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an etchant composition which prevents the problems of generation of odor and deterioration of an etched substrate, or the like, due to corrosion and exhibits sufficient etching rate and etching selectivity especially for an indium oxide based film. <P>SOLUTION: The etchant composition of a metal oxide film consists of a solution containing (A) 5-20 mass% of 2-hydroxy ethane sulfonic acid or its salt in terms of 2-hydroxy ethane sulfonic acid, and (B) 0.05-5 mass% of at least one kind of fluoride compound selected from hydrogen fluoride, ammonium fluoride, potassium fluoride, sodium fluoride and lithium fluoride. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
