发明名称 Methods and apparatus for storing data in a multi-level cell flash memory device with cross-page sectors, multi-page coding and per-page coding
摘要 Methods and apparatus are provided for storing data in a multi-level cell flash memory device with cross-page sectors, multi-page coding and per-page coding. A single sector can be stored across a plurality of pages in the flash memory device. Per-page control is provided of the number of sectors in each page, as well as the code and/or code rate used for encoding and decoding a given page, and the decoder or decoding algorithm used for decoding a given page. Multi-page and wordline level access schemes are also provided.
申请公布号 US9007828(B2) 申请公布日期 2015.04.14
申请号 US201314077519 申请日期 2013.11.12
申请人 LSI Corporation 发明人 Burger Harley F.;Haratsch Erich F.;Ivkovic Milos;Krachkovsky Victor;Vityaev Andrei;Williamson Clifton;Yen Johnson
分类号 G11C16/04;G11C16/08;G06F11/10;G11C16/10;G11C16/06;G11C11/56 主分类号 G11C16/04
代理机构 Duft Bornsen & Fettig LLP 代理人 Duft Bornsen & Fettig LLP
主权项 1. A method for storing data in a multi-level cell flash memory device having a plurality of cells, wherein each cell of said multi-level cell flash memory device is capable of storing a plurality of bits, wherein each of said plurality of bits is from a different page, said method comprising: determining a page type of a current page to be written in said multi-level cell flash memory device; determining a number-of-sectors per page associated with said determined page type; accumulating said determined number-of-sectors; encoding said accumulated sectors; and storing said accumulated sectors in said multi-level cell flash memory device, wherein said number-of-sectors per page is a non-integer number and at least one sector spans a plurality of pages.
地址 Milpitas CA US