发明名称 |
Methods and apparatus for storing data in a multi-level cell flash memory device with cross-page sectors, multi-page coding and per-page coding |
摘要 |
Methods and apparatus are provided for storing data in a multi-level cell flash memory device with cross-page sectors, multi-page coding and per-page coding. A single sector can be stored across a plurality of pages in the flash memory device. Per-page control is provided of the number of sectors in each page, as well as the code and/or code rate used for encoding and decoding a given page, and the decoder or decoding algorithm used for decoding a given page. Multi-page and wordline level access schemes are also provided. |
申请公布号 |
US9007828(B2) |
申请公布日期 |
2015.04.14 |
申请号 |
US201314077519 |
申请日期 |
2013.11.12 |
申请人 |
LSI Corporation |
发明人 |
Burger Harley F.;Haratsch Erich F.;Ivkovic Milos;Krachkovsky Victor;Vityaev Andrei;Williamson Clifton;Yen Johnson |
分类号 |
G11C16/04;G11C16/08;G06F11/10;G11C16/10;G11C16/06;G11C11/56 |
主分类号 |
G11C16/04 |
代理机构 |
Duft Bornsen & Fettig LLP |
代理人 |
Duft Bornsen & Fettig LLP |
主权项 |
1. A method for storing data in a multi-level cell flash memory device having a plurality of cells, wherein each cell of said multi-level cell flash memory device is capable of storing a plurality of bits, wherein each of said plurality of bits is from a different page, said method comprising:
determining a page type of a current page to be written in said multi-level cell flash memory device; determining a number-of-sectors per page associated with said determined page type; accumulating said determined number-of-sectors; encoding said accumulated sectors; and storing said accumulated sectors in said multi-level cell flash memory device, wherein said number-of-sectors per page is a non-integer number and at least one sector spans a plurality of pages. |
地址 |
Milpitas CA US |