Semiconductor device and method for manufacturing thereof

摘要

In a semiconductor device including a transistor using an oxide semiconductor film, stable electric characteristics can be provided and high reliability can be achieved. A structure of the semiconductor device, which achieves high-speed response and high-speed operation, is provided. In a semiconductor device including a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer are stacked in order and a sidewall insulating layer is provided on the side surface of the gate electrode layer, the sidewall insulating layer has an oxygen-excess regions, which is formed in such a manner that a first insulating film is formed and then is subjected to oxygen doping treatment, a second insulating is formed over the first insulating film, and a stacked layer of the first insulating film and the second insulating film are etched.

主权项

1. A semiconductor device comprising:
an oxide semiconductor film provided over an oxide insulating film and including a channel formation region; a gate insulating film over the oxide semiconductor film; a gate electrode layer over the gate insulating film; a sidewall insulating layer including a first insulating film and a second insulating film; a third insulating film over and in contact with the gate electrode layer; and a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor film, wherein the sidewall insulating layer has an oxygen-excess region, wherein the first insulating film is in contact with a part of a top surface of the gate insulating film and side surfaces of the gate electrode layer and the third insulating film, and wherein the second insulating film is in contact with a top surface and a side surface of the first insulating film.