| 主权项 |
1. A method of manufacturing a solid-state imaging device, comprising:
forming a plurality of pixels which are each provided with a photoelectric conversion section that produces a signal charge according to an amount of received light, in a substrate; forming a wiring layer having wirings of plural layers and a surface electrode pad section, on a surface side of the substrate; forming a pad section base layer and a light-shielding film in a same layer on the wiring layer; forming an on-chip lens layer on a light incidence side of an upper layer on an opposite side to a substrate side of the pad section base layer and the light-shielding film; forming a through-hole which penetrates the pad section base layer from above the on-chip lens layer and reaches the surface electrode pad section; forming a through-electrode layer in the through-hole and also forming a back electrode pad section electrically connected to the surface electrode pad section, on the on-chip lens layer; and processing a surface of the on-chip lens layer above at least one of the pixels included in the plurality of pixels, thereby forming an on-chip lens. |
