发明名称 ALLOYED SEMICONDUCTOR QUANTUM DOTS AND CONCENTRATION-GRADIENT ALLOYED QUANTUM DOTS, SERIES COMPRISING THE SAME AND METHODS RELATED THERETO
摘要 <p>An alloyed semiconductor quantum dot comprising an alloy of at least two semiconductors, wherein the quantum dot has a homogeneous composition and is characterized by a band gap energy that is non-linearly related to the molar ratio of the at least two semiconductors; a series of alloyed semiconductor quantum dots related thereto; a concentration-gradient quantum dot comprising an alloy of a first semiconductor and a second semiconductor, wherein the concentration of the first semiconductor gradually increases from the core of the quantum dot to the surface of the quantum dot and the concentration of the second semiconductor gradually decreases from the core of the quantum dot to the surface of the quantum dot; a series of concentration-gradient quantum dots related thereto; in vitro and in vivo methods of use; and methods of producing the alloyed semiconductor and concentration-gradient quantum dots and the series of quantum dots related thereto.</p>
申请公布号 CA2524350(C) 申请公布日期 2015.04.14
申请号 CA20042524350 申请日期 2004.04.28
申请人 INDIANA UNIVERSITY RESEARCH & TECHNOLOGY CORPORATION 发明人 NIE, SHUMING;BAILEY, ROBERT E.
分类号 H01L29/12;H01L;H01L29/06;H01L29/26;H01L35/02 主分类号 H01L29/12
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