| 摘要 |
<p>Provided is an alkylated-graphene oxide composition including an organic semiconductor and alkylated-graphene oxide. The alkylated-graphene oxide composition can be used as an active layer of a field effect transistor type gas sensor, that is, as a sensing layer. Accordingly, the present invention can reduce process costs by using the organic semiconductor and can be applied to a flexible substrate as well as capable of being operated at room temperature. In addition, the present invention can omit a process which additionally forms a receptor layer by forming the active layer with the alkylated-graphene oxide, which is a receptor material, and a complex body where a polymeric semiconductor is dispersed. Moreover, the present invention can improve sensitivity of the sensor since a receptor exists in a channel area of a transistor element.</p> |
