发明名称 |
Gaseous compositions comprising hydrogen fluoride and an alkylated ammonia derivative |
摘要 |
A method of removing at least a portion of a silicon oxide material is disclosed. The silicon oxide is removed by exposing a semiconductor structure comprising a substrate and the silicon oxide to an ammonium fluoride chemical treatment and a subsequent plasma treatment, both of which may be effected in the same vacuum chamber of a processing apparatus. The ammonium fluoride chemical treatment converts the silicon oxide to a solid reaction product in a self-limiting reaction, the solid reaction product then being volatilized by the plasma treatment. The plasma treatment includes a plasma having an ion bombardment energy of less than or equal to approximately 20 eV. An ammonium fluoride chemical treatment including an alkylated ammonia derivative and hydrogen fluoride is also disclosed. |
申请公布号 |
US9005473(B2) |
申请公布日期 |
2015.04.14 |
申请号 |
US201213570866 |
申请日期 |
2012.08.09 |
申请人 |
Micron Technology, Inc. |
发明人 |
Kiehlbauch Mark W.;Greeley J. Neil;Morgan Paul A. |
分类号 |
C07F7/02;H01L21/311;H01L21/033 |
主分类号 |
C07F7/02 |
代理机构 |
TraskBritt |
代理人 |
TraskBritt |
主权项 |
1. A gaseous composition consisting of a hydrogen fluoride gas, an alkylated ammonia derivative gas, and an inert carrier gas. |
地址 |
Boise ID US |