Semiconductor device having electrode pads arranged between groups of external electrodes

摘要

The semiconductor device has the CSP structure, and may include a plurality of electrode pads formed on a semiconductor integrated circuit in order to input/output signals from/to exterior; solder bumps for making external lead electrodes; and rewiring. The solder bumps may be arranged in two rows along the periphery of the semiconductor device. The electrode pads may be arranged inside the outermost solder bumps so as to be interposed between the two rows of solder bumps. Each trace of the rewiring may be extended from an electrode pad, and may be connected to any one of the outermost solder bumps or any one of the inner solder bumps.

主权项

1. A semiconductor device comprising:
a semiconductor substrate having an integrated circuit formed thereon; a plurality of electrode pads formed on the semiconductor substrate, being intended for input and output of signals between the integrated circuit and an external circuit; and a plurality of external electrodes, each connected to a corresponding one of the plurality of electrode pads via uppermost wiring, the external electrodes making connection terminals for the external circuit, wherein the plurality of external electrodes include a first group of external electrodes being outermost external electrodes and a second group of external electrodes arranged inside the first group of external electrodes, and wherein the plurality of electrode pads are arranged between the first group of external electrodes and the second group of external electrodes, and at least one of the plurality of electrode pads is provided at a position where a distance between the at least one of the plurality of electrode pads and one of the first group of external electrodes and a distance between the at least one of the plurality of electrode pads and one of the second group of external electrodes is approximately same.