发明名称 White organic electroluminescent element and lighting device
摘要 Disclosed is a white light-emitting organic electroluminescent device, which is excellent in stability of emission chromaticity over a long operation period, while having high electrical efficiency, long life, excellent storage stability and excellent color rendering properties. Also disclosed is an illuminating device using such an organic electroluminescent device. Specifically disclosed is an organic electroluminescent device having a light-emitting layer between an anode and a cathode, which is characterized by comprising a light-emitting layer A having a maximum emission wavelength of not more than 480 nm and containing a phosphorescent dopant having a maximum emission wavelength of not more than 480 nm, and a light-emitting layer B arranged between the light-emitting layer A and the anode, which has a maximum emission wavelength of not less than 510 nm and contains a phosphorescent dopant. This organic electroluminescent device is also characterized in that the concentration of the phosphorescent dopant contained in the light-emitting layer A varies in the thickness direction of the light-emitting layer A. Also specifically disclosed is an illuminating device using such a white light-emitting organic electroluminescent device.
申请公布号 US9006711(B2) 申请公布日期 2015.04.14
申请号 US200812595921 申请日期 2008.04.04
申请人 Konica Minolta Holdings, Inc. 发明人 Nakayama Yoriko;Nakayama Tomoyuki;Hiyama Kunimasa;Kojima Shigeru
分类号 H01L29/08;H05B33/14;C09K11/06;H01L51/00;H01L51/50 主分类号 H01L29/08
代理机构 Lucas & Mercanti, LLP 代理人 Lucas & Mercanti, LLP
主权项 1. A white organic electroluminescent element comprising: light emitting layers between an anode and a cathode, wherein the light emitting layers include:a light emitting layer A which contains a host compound and a phosphorescence emitting dopant exhibiting a maximum emission wavelength of 480 nm or less; and a light emitting layer B which contains a phosphorescence emitting dopant exhibiting a maximum emission wavelength of 510 nm or more, provided that the light emitting layer B is located between the light emitting layer A and the anode; and a concentration of the phosphorescence emitting dopant in the light emitting layer A changes in a thickness direction of the light emitting layer A, wherein the concentration of the phosphorescence emitting dopant contained in the light emitting layer A is decreased from a side of the anode to a side of the cathode in a thickness direction of the light emitting layer A; wherein the phosphorescence emitting dopant contained in the light emitting layer A has at least one of partial structures represented by Formulas (A) or (B): wherein Ra represents a hydrogen atom, an aliphatic group, an aromatic group or a heterocyclic group; Rb and Rc each represent a hydrogen atom or a substituent; Al represents a group of atoms necessary to form an aromatic ring or an aromatic heterocyclic ring; and M represents Ir or Pt, wherein Ra represents a hydrogen atom, an aliphatic group, an aromatic group or a heterocyclic group; Rb, Rc, Rb1 and Rc1 each represent a hydrogen atom or a substituent; Al represents a group of atoms necessary to form an aromatic ring or an aromatic heterocyclic ring; and M represents Ir or Pt; and the host compound contained in the light emitting layer A is represented by Formula (a): wherein X represents O; Ar represents an aromatic ring; and n is an integer of 0 to 8.
地址 Tokyo JP