Method of preparing semiconductor layer including cavities

摘要

A method of fabricating a semiconductor substrate, includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, etching the substrate using a solution to remove the metallic material layer and a portion of the first semiconductor layer, and forming a cavity in the first semiconductor layer under where the metallic material layer was removed.

主权项

1. A method of fabricating a light emitting device using a recycled substrate, the method comprising:
forming a plurality of compound semiconductor layers on a first substrate, the compound semiconductor layers comprising a first semiconductor layer; forming a patterned layer on the first semiconductor layer, the patterned layer comprising a metallic layer; forming a second semiconductor layer on the first semiconductor layer, wherein a plurality of cavities are formed in the first semiconductor layer while forming the second semiconductor layer; depositing a second substrate on the plurality of compound semiconductor layers, after forming the plurality of compound semiconductor layers on the first substrate; separating the first substrate from the plurality of compound semiconductor layers at the first semiconductor layer, thereby exposing a first surface of the first semiconductor layer; and removing the first semiconductor layer, wherein separating the first substrate from the plurality of compound semiconductor layers comprises:
etching both the first semiconductor layer, to increase the volume of each of the plurality of the cavities, and at least a part of the patterned layer, using a chemical solution, before removing the first semiconductor layer.