Non-volatile semiconductor storage device

摘要

According to one embodiment, there is provided a non-volatile semiconductor storage device including a memory cell and a control unit. The memory cell has a gate electrode including a control gate and a charge storage region on a semiconductor substrate and has a channel region under the gate electrode in the semiconductor substrate. The control unit, during an erase operation where electric charges written in the charge storage region are extracted to the channel region, periodically varies a voltage which is to be applied between the control gate and the channel region.

主权项

1. A non-volatile semiconductor storage device comprising:
a memory cell which has a gate electrode including a control gate and a charge storage region above a semiconductor substrate and which has a channel region under the gate electrode in the semiconductor substrate; and a control unit which, during an erase operation where electric charges written in the charge storage region are extracted to the channel region, periodically varies a voltage to be applied between the control gate and the channel region, the control unit periodically varying the to-be-applied voltage between a first level where electric charges are not extracted from a cell in an erased state to the channel region and a second level where electric charges are extracted from a written cell to the channel region.