发明名称 |
Semiconductor device and method of manufacturing semiconductor device |
摘要 |
A semiconductor device includes: a semiconductor substrate formed with an element region; a first conductive type first region formed in the element region and located on a surface side of the semiconductor substrate; a second conductive type second region located in a deeper position than the first region in the element region and contacting the first region; a first conductive type third region located in a deeper position than the second region in the element region, contacting the second region, and separated from the first region by the second region; and a gate disposed in a trench extending from the surface to reach the third region, and contacting a range of the second region via the insulation film. A thickness of the second region in a depth direction is gradually increased from the peripheral part of the element region to the central part thereof |
申请公布号 |
US9006823(B2) |
申请公布日期 |
2015.04.14 |
申请号 |
US201414166031 |
申请日期 |
2014.01.28 |
申请人 |
Toyota Jidosha Kabushiki Kaisha |
发明人 |
Yamazaki Shinya |
分类号 |
H01L29/78;H01L21/22 |
主分类号 |
H01L29/78 |
代理机构 |
Gifford, Krass, Sprinkle, Anderson & Citkowski, P.C. |
代理人 |
Gifford, Krass, Sprinkle, Anderson & Citkowski, P.C. |
主权项 |
1. A semiconductor device comprising:
a semiconductor substrate formed with an element region; a first conductive type first region that is formed in the element region and located on a surface side of the semiconductor substrate; a second conductive type second region that is located in a deeper position than the first region in the element region and contacts the first region; a first conductive type third region that is located in a deeper position than the second region in the element region, contacts the second region, and is separated from the first region by the second region; and a gate that is disposed in a trench extending from the surface of the semiconductor substrate to reach the third region and contacts a range of the second region that separates the first region from the third region via an insulation film, wherein a thickness of the second region in a depth direction is gradually increased from a peripheral part of the element region to a central part of the element region. |
地址 |
Toyota-shi JP |