Semiconductor device including a fin and a drain extension region and manufacturing method

摘要

One embodiment of a semiconductor device includes a fin on a first side of a semiconductor body. The semiconductor device further includes a body region of a second conductivity type in at least a part of the fin. The semiconductor device further includes a drain extension region of a first conductivity type, a source and a drain region of the first conductivity type, and a gate structure adjoining opposing walls of the fin. The body region and the drain extension region are arranged one after another between the source region and the drain region.

主权项

1. A semiconductor device, comprising:
a fin at a first side of a semiconductor body; a body region of a second conductivity type in at least a part of the fin; a drain extension region of a first conductivity type; a source region and a drain region of the first conductivity type; a gate structure adjoining opposing walls of the fin; and a deep body region of the second conductivity type below the fin, the deep body region being electrically connected to the body region, wherein the body region and the drain extension region are arranged one after another between the source region and the drain region, and wherein a maximum dopant concentration of the deep body region is 1018 cm−3.