Retention detection and/or channel tracking policy in a flash memory based storage system

摘要

A method for determining a retention time in a solid state device (SSD), comprising the steps of providing a plurality of write operations to a memory, determining a reference voltage for each of the write operations, determining a difference between (i) the reference voltage after each of the write operations and (ii) a target reference voltage and if the difference is above a predetermined value, generating a flag indicating an excessive retention has occurred.

主权项

1. A method for determining a retention time in a solid state drive (SSD), comprising the steps of:
programming a plurality of write operations to a memory; tracking a reference voltage for each of said write operations; detecting a difference between (i) said reference voltage determined after each of said write operations and (ii) an optimal reference voltage estimated for read operations from said memory after a pre-defined condition; and if said difference is above a pre-defined threshold, initiating a policy to counteract retention effects.