Apparatus for monitoring ion implantation

摘要

An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second sensor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second sensor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.

主权项

1. A method comprising:
generating a uniform ion implantation current profile from an ion beam; placing a first sensor within an effective range of the uniform ion implantation current profile, wherein the first sensor is on a ring-shaped beam profiler and in direct contact with a top surface of the ring-shaped beam profiler, and wherein the ring-shaped beam profiler is on a wafer holder and a bottom surface of the ring-shaped beam profiler is in direct contact with a top surface of the wafer holder, wherein the wafer holder is configured to support a wafer and the wafer is in direct contact with the top surface of the wafer holder; and estimating a first ion dose based upon a first detected signal from the first sensor.