发明名称 |
Method of removing a metal hardmask |
摘要 |
Methods of removing metal hardmasks in the presence of ultra low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film includes forming a pattern in a metal nitride hardmask layer formed above a low-k dielectric film formed above a substrate. The method also includes etching, using the metal nitride hardmask layer as a mask, the pattern at least partially into the low-k dielectric film, the etching involving using a plasma etch based on SiFx. The etching also involves forming an SiOx passivation layer at least on sidewalls of the low-k dielectric film formed during the etching. The method also includes removing the metal nitride hardmask layer by a dry etch process, where the SiOx passivation layer protects the low-k dielectric film during the removing. |
申请公布号 |
US9006106(B2) |
申请公布日期 |
2015.04.14 |
申请号 |
US201313889550 |
申请日期 |
2013.05.08 |
申请人 |
Applied Materials, Inc. |
发明人 |
Kao Chia-Ling;Kim Kwang-soo;Kang Sean S.;Nemani Srinivas D. |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
Blakely Sokoloff Taylor Zafman LLP |
代理人 |
Blakely Sokoloff Taylor Zafman LLP |
主权项 |
1. A method of patterning a low-k dielectric film, the method comprising:
forming a pattern in a metal nitride hardmask layer formed above a low-k dielectric film formed above a substrate; etching, using the metal nitride hardmask layer as a mask, the pattern at least partially into the low-k dielectric film, the etching comprising using a plasma etch based on SiFx, wherein the etching comprises forming an SiOx passivation layer at least on sidewalls of the low-k dielectric film formed during the etching; and removing the metal nitride hardmask layer by a dry etch process, wherein the SiOx passivation layer protects the low-k dielectric film during the removing. |
地址 |
Santa Clara CA US |