Semiconductor memory device, memory system including the same and method of manufacturing the same

摘要

A semiconductor memory device of the present invention includes a first dielectric layer located on an upper surface of a semiconductor substrate including contact area and a non-contact area, an etching stop layer pattern formed to expose the first dielectric layer in the non-contact area and cover the first dielectric layer in the contact area, a contact hole extended to the semiconductor substrate of the contact area through the etching stop layer pattern and the first dielectric layer, a contact plug located in the contact hole, and a conductive line connected to the contact plug.

主权项

1. A semiconductor memory device, comprising:
gate lines formed on a semiconductor substrate including a contact area, wherein the gate lines are disposed symmetrically at both sides of the contact area; a first dielectric layer located on a semiconductor substrate and the gate lines; an etching stop layer pattern extended in a direction where the gate lines are extended to expose the first dielectric layer at the both sides of the contact area and cover the first dielectric layer in the contact area; contact holes extended to the semiconductor substrate in the contact area through the etching stop layer pattern and the first dielectric layer; contact plugs located in the contact holes; and conductive lines connected to the contact plugs and extended in a direction crossing the etching stop layer pattern and the gate lines.