Deposition method and method for manufacturing semiconductor device

摘要

An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaOX). The oxide target includes GaOX, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.

主权项

1. A method for manufacturing a semiconductor device comprising the steps of:
forming a first insulating layer comprising gallium oxide over a substrate; forming an oxide semiconductor layer over the first insulating layer; forming a first electrode electrically connected to the oxide semiconductor layer; forming a second insulating layer comprising gallium oxide over the oxide semiconductor layer; and forming a second electrode over the second insulating layer, wherein the first and the second insulating layer are formed by a sputtering method, and wherein the first insulating layer and the second insulating layer are in contact with the oxide semiconductor layer.