发明名称 Three dimensional semiconductor device including pads
摘要 A semiconductor device includes a substrate in which a cell region and a contact region are defined, a pad structure including a plurality of first conductive layers and a plurality of first insulating layers formed alternately with each other in the contact region of the substrate, wherein an end of the pad structure is patterned stepwise, portions of the first conductive layers exposed at the end of the pad structure are defined as a plurality of pad portions, and the plurality of pad portions have a greater thickness than unexposed portions of the plurality of first conductive layers.
申请公布号 US9006884(B2) 申请公布日期 2015.04.14
申请号 US201313845446 申请日期 2013.03.18
申请人 SK Hynix Inc. 发明人 Lee Ki Hong;Pyi Seung Ho;Jeon Seok Min
分类号 H01L23/498 主分类号 H01L23/498
代理机构 William Park & Associates Patent Ltd. 代理人 William Park & Associates Patent Ltd.
主权项 1. A semiconductor device, comprising: a substrate in which a cell region and a contact region are defined; a pad structure including a plurality of conductive layers and a plurality of first insulating layers formed alternately with each other in the contact region of the substrate, wherein an end of the pad structure is patterned stepwise, and each of the conductive layers includes a pad portion which is non-covered by an upper first conductive layer and a remaining portion which is covered by the upper first conductive layer, and the pad portion has a greater thickness than the remaining.
地址 Gyeonggi-do KR