Semiconductor memory devices

摘要

A semiconductor memory device includes a substrate including a cell region and a peripheral region, word lines on the substrate of the cell region, each of the word lines including a charge storing part and a control gate electrode sequentially stacked, and a peripheral gate pattern on the substrate of the peripheral region. Each of the control gate electrode and the peripheral gate pattern includes a high-carbon semiconductor pattern and a low-carbon semiconductor pattern, the low-carbon semiconductor pattern being on the high-carbon semiconductor pattern.

主权项

1. A semiconductor memory device comprising:
a first insulating layer on a substrate; a first semiconductor layer on the first insulating layer; a second semiconductor layer disposed on the first semiconductor layer and in contact with the first semiconductor layer; an upper gate electrode on the second semiconductor layer, wherein the first and second semiconductor layers include carbon element, and a carbon concentration of the first semiconductor layer is greater than a carbon concentration of the second semiconductor layer; a lower gate electrode disposed between the first insulating layer and the first semiconductor layer; and a second insulating layer disposed between the lower gate electrode and the first semiconductor layer, wherein the lower gate electrode includes: a third semiconductor layer disposed between the first insulating layer and the second insulating layer, and a fourth semiconductor layer disposed between the third semiconductor layer and the second insulating layer, and wherein a carbon concentration of the third semiconductor layer is greater than a carbon concentration of the fourth semiconductor layer.