Light emitting diode having increased light extraction

摘要

An n-type layer, an active layer, and a p-type layer are grown on a growth substrate. Portions of the p-type layer and active layer are etched away to expose the n-type layer, and an n-electrode is formed over the exposed portions of the n-type layer. A first dielectric layer is formed over the n-electrodes. A transparent conductor layer is formed over the p-type layer and the first dielectric layer. A p-electrode is formed over the transparent conductor layer. A transparent bonding layer is deposited over the transparent conductor layer and the p-electrode. A transparent support substrate is bonded to the p-type layer via the bonding layer. The growth substrate is then removed to expose the n-type layer, and the layers are etched to expose the n and p electrodes for connection to a power source. A reflector layer is formed on the bottom surface of the substrate.

主权项

1. A light emitting diode (LED) structure comprising:
an epitaxial p-type layer; an epitaxial n-type layer, light generated by the LED structure exiting through the n-type layer; an epitaxial active layer between the p-type layer and the n-type layer, wherein the p-layer and the active layer are etched at one or more first areas to expose the n-type layer for connection to an n-electrode, and wherein the one or more first areas create one or more non-light emitting areas; a metal n-electrode electrically contacting the n-type layer through the one or more first areas; a transparent conductor layer formed on the p-type layer; a metal p-electrode formed on the transparent conductor layer and electrically contacting the p-type layer via the transparent conductor layer, the p-electrode being located in the one or more non-light emitting areas so as not to substantially block light; a dielectric, transparent bonding layer, the p-electrode being within the bonding layer with a portion of the p-electrode being exposed on a surface of the LED structure for connection to a power source, and the n-electrode being above the bonding layer with a portion of the n-electrode being exposed on a surface of the LED structure for connection to the power source; a transparent support substrate bonded to the p-layer by at least the bonding layer, the transparent support substrate being thicker than the epitaxial layers; and a reflector opposing a bottom surface of the substrate, wherein light emitted by the active layer in the direction of the n-type layer exits through the n-type layer, and wherein light emitted by the active layer in the direction of the substrate is reflected upwards by the reflector and exits through the n-type layer.