| 摘要 |
<p>The present invention aims to provide a photodetector circuit with a very low current consumption. There are two P channel MOS transistors facing each other where a gate is respectively accessed to a drain of P channel MOS transistors facing each other. A drain of P channel MOS transistor of one side is discharged by an ON-state current of N channel MOS transistor that is turned ON by a voltage generated at a photovoltaic device. A drain of the P channel MOS transistor of the other side is discharged by an ON-state current of depression type N channel MOS transistor where a voltage of standard power supply terminal is entered into a gate and a voltage generated at a photovoltaic device is entered into a source.</p> |
