| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion element and an imaging device with high photoelectric conversion efficiency and a low dark current.SOLUTION: In the photoelectric conversion element, a lower electrode, an electron blocking layer, a photoelectric conversion layer, an intermediate layer, and an upper electrode are laminated in this order. The photoelectric conversion layer is a bulk hetero layer in which a p-type organic semiconductor is mixed with a crystallized fullerene or a crystallized fullerene derivative. The intermediate layer contains an amorphous fullerene or an amorphous fullerene derivative, and the upper electrode is constituted of a transparent conductive film. |
