| 摘要 |
PROBLEM TO BE SOLVED: To solve such problems in a conventional photoresist that, in a process of manufacturing a semiconductor device, when a wafer in which ion implantation is finished is left to stand for a long time as with deposition of a photoresist on the wafer, deposition of foreign substance or generation of a dent occurs on a wafer surface and this induces a defective device.SOLUTION: A photoresist to be used for forming a mask is provided; and the mask is to be used at a time of ion implantation of impurities with high energy into a semiconductor substrate in a process of manufacturing a semiconductor device including the semiconductor substrate. The photoresist comprises a base polymer and a photosensitive agent, in which the base polymer and the photosensitive agent do not contain fluorine. |
