发明名称 SEMICONDUCTOR FILM, OXIDE MICROPARTICLE FLUID DISPERSION, METHOD FOR MANUFACTURING SEMICONDUCTOR FILM, AND THIN-FILM TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor film which can be manufactured even in the atmosphere, and enables the achievement of a high electrical conductivity.SOLUTION: A semiconductor film comprises: an aggregate of oxide microparticles including at least one metal selected from In, Zn and Sn; and at least one kind of ligands coordinated to the oxide microparticles and selected from ligands expressed by the general formula (A), ligands expressed by the general formula (B) and ligands expressed by the general formula (C). [In the general formula (A), Xand Xrepresent -SH, -NH, -OH or -COOH, and Aand Brepresent a hydrogen atom or a substituent group, of which the number of atoms is 1 to 10; in the general formula (B), Xand Xrepresent -SH, -NH, -OH or -COOH, and Aand Brepresent a hydrogen atom or a substituent group, of which the number of atoms is 1 to 10; and in the general formula (C), Xrepresents -SH, -NHor -OH, and Arepresents a hydrogen atom or a substituent group, of which the number of atoms is 1 to 10.]
申请公布号 JP2015070204(A) 申请公布日期 2015.04.13
申请号 JP20130205194 申请日期 2013.09.30
申请人 FUJIFILM CORP 发明人 ONO MASASHI;TANAKA ATSUSHI;SUZUKI MASAYUKI
分类号 H01L29/786;H01L21/336 主分类号 H01L29/786
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