SEMICONDUCTOR DEVICE INCLUDING SOI BUTTED JUNCTION TO REDUCE SHORT-CHANNEL PENALTY

摘要

A semiconductor device comprises first and second gate stacks formed on a semiconductor-on-insulator (SOI) substrate. The SOI substrate includes a dielectric layer interposed between a bulk substrate layer and an active semiconductor layer. A first extension implant portion is disposed adjacent to the first gate stack and a second extension implant portion is disposed adjacent to the second gate stack. A halo implant extends continuously about the trench. A butting implant extends between the trench and the dielectric layer. An epitaxial layer is formed at the exposed region such that the butting implant is interposed between the epitaxial layer and the dielectric layer.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming a plurality of gate stacks on a semiconductor-on-insulator (SOI) substrate, the SOI substrate including a dielectric layer interposed between a bulk substrate layer and an active semiconductor layer; implanting a first dopant at the active semiconductor layer to form an extension implant extending between a first gate stack and a second gate among the plurality of gate stacks; applying a spike anneal after the extension implant; etching the region of the active semiconductor layer to form a trench that extends through the extension implant and exposes trench surfaces of the active semiconductor layer, the trench surfaces including an exposed planar region; implanting a second dopant at the trench surfaces to form a halo implant that surrounds the trench; applying a furnace anneal different from the spike anneal to activate and diffuse the halo implant; implanting a third dopant at the exposed region to form a butting implant that extends between the trench and the dielectric layer; and growing an epitaxial layer at the exposed region such that the butting implant is interposed between the epitaxial layer and the dielectric layer.