ENABLING HIGH ACTIVATION OF DOPANTS IN INDIUM-ALUMINUM-GALIUM-NITRIDE MATERIAL SYSTEM USING HOT IMPLANTATION AND NANOSECOND ANNEALING

摘要

Embodiments of the present disclosure generally relate to doping and annealing substrates. The substrates may be doped during a hot implantation process, and subsequently annealed using a nanosecond annealing process. The combination of hot implantation and nanosecond annealing reduces lattice damage of the substrates and facilitates a higher dopant concentration near the surface of the substrate to facilitate increased electrical contact with the substrate. An optional capping layer may be placed over the substrate to reduce outgassing of dopants or to control dopant implant depth.

主权项

1. A method of processing a substrate, comprising:
implanting a dopant into a substrate during a hot implant process, wherein during the hot implant process the substrate is maintained at a temperature within a range of about 80 degrees Celsius to about 600 degrees Celsius; and annealing the substrate during a nanosecond annealing process to activate the dopant and to repair crystalline defects in the substrate, wherein during the nanosecond annealing process the substrate is exposed to one or more pulses of laser energy each having a duration less than about 10 microseconds and the substrate remains solid.